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| 2N5545/46/47/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary Part Number 2N5545 2N5546 2N5547 VGS(off) (V) -0.5 to -4.5 -0.5 to -4.5 -0.5 to -4.5 V(BR)GSS Min (V) -50 -50 -50 gfs Min (mS) 1.5 1.5 1.5 IG Max (pA) -50 -50 -50 jVGS1 - VGS2j Max (mV) 5 10 15 Features D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise High CMRR: 100 dB Benefits D D D D D D Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Applications D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Description The 2N5545/5546/5547JANTX/JANTXV are monolithic dual n-channel JFETs designed to provide high input impedance (IG < 50 pA) for general-purpose differential amplifiers. The 2N5545 features minimum system error and calibration (5-mV offset maximum). The TO-71 package is available with full military processing (see Military Information). TO-71 S1 1 D1 2 3 G1 Top View 4 6 5 G2 D2 S2 Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 4 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70253. Siliconix P-37514--Rev. B, 25-Jul-94 1 2N5545/46/47/JANTX/JANTXV Specificationsa Limits 2N5545 2N5546 2N5547 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Gate-Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA, VDS = 0 V VDS = 15 V, ID = 0.5 nA VDS = 15 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V -57 -2 3 -10 -20 -3 0.7 -50 -0.5 0.5 -4.5 8 -100 -150 -50 -50 -0.5 0.5 -4.5 8 -100 -150 -50 -50 V -0.5 0.5 -4.5 8 -100 -150 -50 mA pA nA pA V Dynamic Common-Source Forward Transconductance c Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos Ciss Crss en NF VDS = 15 V, VGS = 0 V S f = 1 kHz 2.5 2 3.5 VDS = 15 V, VGS = 0 V S f = 1 MHz VDS = 15 V, ID = 200 mA f = 10 Hz RG = 1 MW 1.3 20 0.1 1.5 6.0 25 6 2 180 3.5 1.5 6.0 25 6 2 200 5 1.5 6.0 25 6 pF 2 nV Hz dB mS mS Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratiod Transconductance Ratiod Differential Output Conductance Differential Gate Current |VG7S1 VGS2| VDG = 15 V, ID = 50 mA VDG = 15 V, ID = 200 mA VDG = 15 V, ID = 200 mA TA = -55 to 125_C VDS = 15 V, VGS = 0 V VDS = 15 V, ID = 200 mA f = 1 kHz VDG = 15 V, VGS = 0 V f = 1 kHz VDG = 15 V, ID = 200 mA TA = 125_C 0.98 0.95 5 5 10 10 10 20 15 mV 15 40 mV/ _C D|V GS1 - V GS2| DT I DSS1 I DSS2 gfs1 gfs2 |gos1 |I G1 gos2| I G2| 1 0.9 1 0.9 1 0.99 0.97 1 0.95 1 0.9 1 mS 0.1 1 2 3 1 5 5 5 nA Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Assumes smaller value in the numerator. NQP 2 Siliconix P-37514--Rev. B, 25-Jul-94 2N5545/46/47/JANTX/JANTXV Typical Characteristics Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 5 I DSS - Saturation Drain Current (mA) 3 g fs - Forward Transconductance (mS) 100 nA 10 nA TA = 125_C I G - Gate Leakage 1 nA IGSS @ 125_C 100 pA 200 mA 50 mA 50 mA Gate Leakage Current IG @ ID = 200 mA 4 gfs 3 IDSS 2.6 2.2 2 1.8 10 pA TA = 25_C 1 pA 0.1 pA 0 10 20 30 IGSS @ 25_C 1 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 0 -1 -2 -3 -4 -5 1.4 0 VGS(off) - Gate-Source Cutoff Voltage (V) 1 40 50 VDG - Drain-Gate Voltage (V) 5 Output Characteristics VGS(off) = -2 V 5 Output Characteristics VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V 4 I D - Drain Current (mA) I D - Drain Current (mA) 4 3 VGS = 0 V -0.2 V 3 -0.9 V 2 -1.2 V -1.5 V 1 -1.8 V -2.1 V 0 0 4 8 12 -2.4 V 16 20 2 -0.4 V -0.6 V -0.8 V 1 -1.0 V -1.2 V -1.4 V 16 20 0 0 4 8 12 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) 2 Output Characteristics VGS(off) = -2 V 2.5 Output Characteristics VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V -0.9 V 1.6 I D - Drain Current (mA) VGS = 0 V -0.2 V -0.4 V I D - Drain Current (mA) 2.0 1.2 -0.6 V -0.8 V 1.5 -1.2 V 1.0 -1.5 V -1.8 V 0.5 -2.1 V -2.4 V 0 0 0.2 0.4 0.6 0.8 1 0.8 -1.0 V 0.4 -1.2 V -1.4 V 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) -1.6 V 1 VDS - Drain-Source Voltage (V) Siliconix P-37514--Rev. B, 25-Jul-94 3 2N5545/46/47/JANTX/JANTXV Typical Characteristics (Cont'd) 5 Transfer Characteristics 100 VGS(off) = -2 V VDS = 10 V (mV) Gate-Source Differential Voltage vs. Drain Current VDG = 15 V TA = 25_C 4 I D - Drain Current (mA) TA = -55_C 25_C 2 3 VGS1 - VGS2 2N5547 10 2N5545 1 125_C 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS - Gate-Source Voltage (V) 1 0.01 0.1 ID - Drain Current (mA) 1 100 Voltage Differential with Temperature vs. Drain Current VDG = 15 V DTA = 25 to 125_C DTA = -55 to 25_C CMRR (dB) 2N5547 130 Common Mode Rejection Ratio vs. Drain Current DVDG D VGS1 - VGS2 ( mV/ _C ) 120 CMRR = 20 log 110 DVDG = 10 - 20 V 100 5 - 10 V 90 D VGS1 - VGS2 10 Dt 2N5545 1 0.01 0.1 ID - Drain Current (mA) 1 80 0.01 0.1 ID - Drain Current (mA) 1 100 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( W ) 1k On-Resistance vs. Drain Current 80 A V - Voltage Gain 800 60 VGS(off) = -3 V 40 AV + 20 VGS(off) = -2 V g fs R L 1 ) R Lg os 600 VGS(off) = -2 V 400 VGS(off) = -3 V Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 200 0 0.01 0 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 4 Siliconix P-37514--Rev. B, 25-Jul-94 2N5545/46/47/JANTX/JANTXV Typical Characteristics (Cont'd) 10 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 5 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 8 4 6 VDS = 0 V 4 5V 3 VDS = 0 V 5V 2 2 15 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 20 1 15 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 2.5 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V Output Conductance vs. Drain Current VGS(off) = -2 V VDS = 15 V f = 1 kHz (nV / Hz) g os - Output Conductance ( mS) 16 ID @ 200 mA 12 2.0 TA = -55_C 1.5 e n - Noise Voltage 8 VGS = 0 V 1.0 25_C 4 0.5 125_C 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0.01 0.1 ID - Drain Current (mA) 1 2.5 g fs - Forward Transconductance (mS) Common-Source Forward Transconductance vs. Drain Current VGS(off) = -2 V VDS = 15 V f = 1 kHz rDS(on) - Drain-Source On-Resistance ( W ) 1k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 g os - Output Conductance ( mS) 2.0 TA = -55_C 1.5 25_C 1.0 800 gos 8 600 6 400 rDS 4 0.5 200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 15 V, VGS = 0 V, f = 1 kHz 0 -1 -2 -3 -4 -5 2 125_C 0 0.01 0.1 ID - Drain Current (mA) 1 0 0 VGS(off) - Gate-Source Cutoff Voltage (V) Siliconix P-37514--Rev. B, 25-Jul-94 5 |
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